: Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
: Semiconductor Power Devices Physics, Characteristics, Reliability
: Springer-Verlag
: 9783319709178
: 2
: CHF 198.40
:
: Elektronik, Elektrotechnik, Nachrichtentechnik
: English
: 723
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: PC/MAC/eReader/Tablet
: PDF
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Josef Lutz studied Physics at the University of Stuttgart. He invented the Controlled Axial Lifetime (CAL) diode and holds several patents. In 1999 he graduated as Ph.D in electrical engineering at the University of Ilmenau. Since August 2001 he is a Professor for Power Electronics and Electromagnetic Compatibility at TU Chemnitz, Germany. He is the consulting Director of the PCIM, member of four international Program Committees and member of the Editorial Advisory Board of Microelectronics Reliability. He was awarded with the degree of Honorable Professor by the North Caucasus State University Stavropol, Russia, in 2005. 

Heinrich Schlangenotto received the Ph.D. degree in theoretical physics at the University of Münster. In 1966 he joined the Research Institute of AEG-Telefunken in Frankfurt which in 1988 passes to Daimler-Benz. Working on the physics underlying the operation modes of semiconductor power devices, he improved the description of forward conduction based on a new insight in the spatial distribution of recombination. Investigating the injection and temperature dependence of radiative recombination, which is used in analysing device operation, he finds an important participation of excitons even near room temperature. To improve the dynamic behaviour of rectifier diodes he invented the fast, soft recovery SPEED-diode. He gave the first quantitative description of the dynamical avalanche mechanism limiting fast switching. From 1991 to 2001 he held a lecture on power devices at the TU Darmstadt, Germany. 

< >Uwe Scheuermann joined Semikron in Nuremberg, Germany, after completing his Ph.D. in semiconductor physics in 1990. After spending 5 years with the development of diode and thyristor chips, he changed his focus to the development of power modules. He has been involved in the development of the advanced power module families without base plates and the implementation of new packaging concepts like spring contacts. He has published more than 50 papers and holds several patents in the field of packaging technology. Today, he is at Semikron responsible for the reliability of components. He is a member of the board of directors of the PCIM Europe and of the program committee of the CIPS. In 2014 he was appointed as honorary professor for electrical engineering at the Friedrich-Alexander-Universit of Erlangen, where he lectured since 2006.

Rik De Doncker received his degree of Doctor in Electrical Engineering from the Katholieke Universiteit Leuven, Belgium in 1986. During 1987 he was appointed Visiting Associate Professor at the University of Wisconsin, Madison. In 1988, he was employed as a General Electric Company fellow at the microelectronic center IMEC, Leuven, Belgium. In Dec. 1988, he joined the General Electric Company at the Corporate Research and Development Center, Schenectady, NY where he led research on drives and high power soft-switching converters, ranging from 100 kW to 4 MW, for aerospace, industrial and traction applications. In 1994 he joined Silicon Power Corporation (formerly GE-SPCO) as Vice President Technology where he worked on high power converter systems and MTO devices and was responsible for the development and production of world's first 15 kV medium voltage transfer switch. Since Oct. 1996 he became professor at the RWTH-Aachen, where he leads the Institut für Stromrichtertechnik und Elektrische Antriebe (ISEA).
Preface to the Second Edition5
Preface to the First Edition7
Contents9
Symbols16
1 Power Semiconductor Devices—Key Components for Efficient Electrical Energy Conversion Systems19
1.1 Systems, Power Converters and Power Semiconductor Devices19
1.1.1 Basic Principles of Power Converters21
1.1.2 Types of Power Converters and Selection of Power Devices23
1.2 Operating and Selecting Power Semiconductors26
1.3 Applications of Power Semiconductors29
1.4 Power Electronics for Carbon Emission Reduction32
References36
2 Semiconductor Properties39
2.1 Introduction39
2.2 Crystal Structure42
2.3 Energy Gap and Intrinsic Concentration44
2.4 Energy Band Structure and Particle Properties of Carriers49
2.5 The Doped Semiconductor53
2.6 Current Transport63
2.6.1 Carrier Mobilities and Field Currents63
2.6.2 High-Field Drift Velocities70
2.6.3 Diffusion of Carriers, Current Transport Equations and Einstein Relation72
2.7 Recombination—Generation and Lifetime of Non-equilibrium Carriers75
2.7.1 Intrinsic Recombination Mechanisms77
2.7.2 Recombination at Recombination Centers Including Gold, Platinum and Radiation Defects79
2.8 Impact Ionization99
2.9 Basic Equations of Semiconductor Devices106
2.10 Simple Conclusions110
2.10.1 Temporal and Spatial Decay of a Minority Carrier Concentration110
2.10.2 Temporal and Spatial Decay of a Charge Density111
References112
3 pn-Junctions118
3.1 The pn-Junction in Thermal Equilibrium118
3.1.1 The Abrupt Step Junction121
3.1.2 Graded Junctions128
3.2 Current-Voltage-Characteristics of the pn-Junction131
3.3 Blocking Characteristics and Breakdown of the pn-Junction139
3.3.1 Blocking Current139
3.3.2 Avalanche Multiplication and Breakdown Voltage143
3.3.3 Blocking Capability with Wide-Bandgap Semiconductors152
3.4 Injection Efficiency of Emitter Regions154
3.5 Capacitance of pn-Junctions161
References164
4 Introduction to Power Device Technology166
4.1 Crystal Growth166
4.2 Neutron Transmutation for Adjustment of the Wafer Doping168
4.3 Epitaxial Growth171
4.4 Diffusion173
4.4.1 Diffusion Theory, Impurity Distributions174
4.4.2 Diffusion Constants and Solubility of Dopants182
4.4.3 High Concentration Effects, Diffusion Mechanisms185
4.5 Ion Implantation187
4.6 Oxidation and Masking192
4.7 Edge Terminations194
4.8 Passivation199
4.9 Recombination Centers200
4.10 Radiation-Induced Doping206
4.11 Some Aspects on Technology of GaN Devices208
References213
5 pin Diodes218
5.1 Structure of the pin Diode218
5.2 I–V Characteristic of the pin Diode220
5.3 Design and Blocking Voltage of the pin Diode221
5.4 Forward Conduction Behavior227
5.4.1 Carrier Distribution227
5.4.2 Junction Voltages230
5.4.3 Voltage Drop Across the Middle Region232
5.4.4 Voltage Drop in the Hall Approximation233
5.4.5 Emitter-Recombination, Effective Carrier Lifetime and Forward Characteristic235
5.4.6 Temperature Dependency of the Forward Characteristics244
5.5 Relation Between Stored Charge and Forward Voltage245
5.6 Turn-on Behavior of Power Diodes247
5.7 Reverse-Recovery of Power Diodes249
5.7.1 Definitions249
5.7.2 Reverse-Recovery Related Power Losses256
5.7.3 Reverse Recovery: Charge Dynamic in the Diode260
5.7.4 Fast Diodes with Optimized Reverse-Recovery Behavior268
5.7.4.1 Diodes with a Doping Step in the Low-Doped Layer268
5.7.4.2 Diodes with Anode Structures for Improving the Recovery Behavior269
5.7.4.3 The EMCON-Diode271
5.7.4.4 The CAL-Diode273
5.7.4.5 The Hybrid Diode275
5.7.4.6 The Tandem Diode277<