Thi book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
Dr. Li received his Bachelor degree of Science from Sichuan University in 2009, and Ph.D from Peking University in 2014 Prizes and awards:
2009-2014, Peking University
Leo KoGuan Scholarship, Chenming Hu Scholarship, Merit Student, Creative Talent Award.
2005-2009, Sichuan University
National Scholarship (twice), National Encouragement Scholarship, Xinyuan Scholarship (twice),
Comprehensive First-class Scholarship, Excellent Student Leader. Publications: 1. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, 'Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion-Implantation after Germanidation Technique,' IEEE Electron Device Lett.,vol. 33, no. 12, pp. 1687-1689, Dec. 2012.
2. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, 'Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation,' IEEE Electron Device Lett., vol. 34, no. 5, pp. 596-598, May. 2013.
3. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Min Li, Ming Li, Xing Zhang, and Ru Huang, 'Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n⁺/p Diode Achieved by Multiple Implantation and Multiple Annealing Technique,' IEEE Electron Device Lett., vol. 34, no. 9, pp. 1097-1099, Sep. 2013.
4. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Xing Zhang and Ru Huang, 'Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film,' ECS Solid State Lett., Vol. 1, no. 4, pp. Q33-Q34, 2012.
5. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, 'Study on Schottky Barrier Modulation of NiGe/Ge by Ion-implantation after Germanidation Technique,' The 11th ICSICT, Xi'an, 2012.
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