Semiconductor Power Devices Physics, Characteristics, Reliability
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Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
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Semiconductor Power Devices Physics, Characteristics, Reliability
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Springer-Verlag
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9783642111259
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1
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CHF 142.40
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:
Elektronik, Elektrotechnik, Nachrichtentechnik
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English
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536
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Wasserzeichen
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PC/MAC/eReader/Tablet
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PDF
Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.
Josef Lutz joined Semikron in Nuremberg, Germany, in 1983. First he worked in the development of GTO thyristors, then in the field of fast recovery diodes. He introduced the Controlled Axial Lifetime (CAL) diode, is holder of several patents regarding fast diodes, and has published more than 100 papers and conference contributions. In 1999 he received his Ph.D. in electrical engineering at the University of Ilmenau, Germany. Since August 2001 he is Professor for Power Electronics and Electromagnetic Compatibility at the Chemnitz University of Technology, Germany. He is member of the board of directors of the ZfM, of the International Steering Committee of the EPE, advisory board of the PCIM, of the program committee of the ISPS and CIPS. In 2005 he was awarded the rank of an honourable professor at the North Caucasus State Technical University in Stavropol. Uwe Scheuermann joined Semikron in Nuremberg, Germany, after completing his Ph.D. in semiconductor physics in 1990. After spending 5 years with the development of diode and thyristor chips, he changed his focus to the development of power modules. He has been involved in the development of the advanced power module families without base plates and the implementation of new packaging concepts like spring contacts. He has published more than 30 papers and holds several patents in the field of packaging technology. Today, he is at Semikron responsible for the reliability of components. He is a member of the board of directors of the PCIM Europe and of the program committee of the CIPS. Since 2006 he is engaged as an external lecturer at the Friedrich-Alexander-Universit of Erlangen. Rik De Doncker received his degree of Doctor in Electrical Engineering from the Katholieke Universiteit Leuven, Belgium in 1986. During 1987 he was appointed Visiting Associate Professor at the University of Wisconsin, Madison. In 1988, he was employed as a General Electric Company fellow at the microelectronic center IMEC, Leuven, Belgium. In Dec. 1988, he joined the General Electric Company at the Corporate Research and Development Center, Schenectady, NY where he led research on drives and high power soft-switching converters, ranging from 100 kW to 4 MW, for aerospace, industrial and traction applications. In 1994 he joined Silicon Power Corporation (formerly GE-SPCO) as Vice President Technology where he worked on high power converter systems and MTO devices and was responsible for the development and production of world's first 15 kV medium voltage transfer switch. Since Oct. 1996 he became professor at the RWTH-Aachen, where he leads the Institute für Stromrichtertechnik und Elektrische Antriebe (ISEA). In Oct. 2006 he became director of the E.ON Energy Research Center at RWTH Aachen University. Heinrich Schlangenotto received the Ph.D. degree in theoretical physics at the University of Münster, in 1966 he joined the Research Institute of AEG-Telefunken in Frankfurt. Working on operation principles of semiconductor power devices, he improved the description of forward conduction based on a new insight in the spatial distribution of recombination. Investigating the injection and temperature dependence of radiative recombination, which is used in analyzing device operation, he finds an important influence of exciton formation even near room temperature. A major point of his work was the development of device concepts such as the fast, soft recovery SPEED-diode. He gave the first quantitative description of the dynamical avalanche mechanism limiting fast switching. From 1991 to 2001 he held a lecture on power devices at the Technical University of Darmstadt. His results were published in many papers and conference reports.
Semiconductor Power Devices
1
Preface
4
Contents
6
Chapter 1 Power Semiconductor Devices Key Components for Efficient Electrical Energy Conversion Systems
12
1.1 Systems, Power Converters, and Power Semiconductor Devices
12
1.1.1 Basic Principles of Power Converters
14
1.1.2 Types of Power Converters and Selection of Power Devices
15
1.2 Operating and Selecting Power Semiconductors
18
1.3 Applications of Power Semiconductors
21
References
25
Chapter 2 Semiconductor Properties
27
2.1 Introduction
27
2.2 Crystal Structure
29
2.3 Energy Gap and Intrinsic Concentration
31
2.4 Energy Band Structure and Particle Properties of Carriers
36
2.5 The Doped Semiconductor
40
2.6 Current Transport
49
2.6.1 Carrier Mobilities and Field Currents
49
2.6.2 High-Field Drift Velocities
55
2.6.3 Diffusion of Carriers and Current Transport Equations
56
2.7 Recombination-Generation and Lifetime of Non-equilibrium Carriers
58
2.7.1 Intrinsic Recombination Mechanisms
60
2.7.2 Recombination and Generation at Recombination Centers
61
2.8 Impact Ionization
70
2.9 Basic Equations of Semiconductor Devices
76
2.10 Simple Conclusions
79
References
82
Chapter 3 pn-Junctions
86
3.1 The pn-Junction in Thermal Equilibrium
86
3.1.1 The Abrupt Step Junction
89
3.1.2 Graded Junctions
95
3.2 CurrentVoltage Characteristics of the pn-Junction
98
3.3 Blocking Characteristics and Breakdown of the pn-Junction
107
3.3.1 Blocking Current
107
3.3.2 Avalanche Multiplication and Breakdown Voltage
110
Temperature Dependence
118
3.3.3 Blocking Capability with Wide-Gap Semiconductors
119
3.4 Injection Efficiency of Emitter Regions
120
3.5 Capacitance of pn-Junctions
127
References
129
Chapter 4 Short Introduction to Power Device Technology
131
4.1 Crystal Growth
131
4.2 Neutron Transmutation for Adjustment of the Wafer Doping
134
4.3 Epitaxial Growth
136
4.4 Diffusion
137
4.5 Ion Implantation
142
4.6 Oxidation and Masking
147
4.7 Edge Terminations
150
4.7.1 Bevelled Termination Structures
150
4.7.2 Planar Junction Termination Structures
152
4.7.3 Junction Termination for Bidirectional Blocking Devices
154
4.8 Passivation
155
4.9 Recombination Centers
156
4.9.1 Gold and Platinum as Recombination Centers
156
4.9.2 Radiation-Induced Recombination Centers
159
4.9.3 Radiation-Enhanced Diffusion of Pt and Pd
162
References
163
Chapter 5 pin-Diodes<
