: Bretislav Heinrich, J. Anthony C. Bland
: Bretislav Heinrich, J.A.C. Bland
: Ultrathin Magnetic Structures IV Applications of Nanomagnetism
: Springer-Verlag
: 9783540271642
: 1
: CHF 132.90
:
: Maschinenbau, Fertigungstechnik
: English
: 258
: Wasserzeichen/DRM
: PC/MAC/eReader/Tablet
: PDF

The ability to understand and control the unique properties of interfaces has created an entirely new field of magnetism which already has a profound impact in technology and is providing the basis for a revolution in electronics. The last decade has seen dramatic progress in the development of magnetic devices for information technology but also in the basic understanding of the physics of magnetic nanostructures. Volume III describes thin film magnetic properties and methods for characterising thin film structure topics that underpin the present 'spintronics' revolution in which devices are based on combined magnetic materials and semiconductors. The present volume (IV) deals with the fundamentals of spintronics: magnetoelectronic materials, spin injection and detection, micromagnetics and the development of magnetic random access memory based on GMR and tunnel junction devices. Together these books provide readers with a comprehensive account of an exciting and rapidly developing field. The treatment is designed to be accessible both to newcomers and to experts already working in this field who would like to get a better understanding of this very diversified area of research.



Bret Heinrich: Professor Physics Department, Simon Fraser University, Director Surface Physics Laboratory , SFU; Fellow of American Physical Society; Associate member of Canadian Institute for Advanced Research CIAR); member of Canadian European Research Initiative on Nanostructures (CERION II); a fellow of Alexander von Humboldt Foundation, member of Advisory Committee, Annual Conference on Magnetism and Magnetic Materials (MMM), American Institute of Physics; member of International Advisory Committee, International Colloquium on Thin Films and Surfaces (ICMFS).

Anthony Bland: Professor at the Cavendish Laboratory, Cambridge University, Fellow of the Institute of Physics (UK), and Fellow of Selwyn College has directed the Thin Film Magnetism group at the Cavendish Laboratory since 1989. He frequently serves as an advisory committee member (Rutherford Laboratory, UK and various international conferences) and was awarded the Wohlfarth prize by the Institute of Physics and the Institute of Electrical Engineers in 1999.

Preface5
Contents7
Contributors11
Acronyms13
1 Introduction15
2 Magnetoelectronics18
2.1 Background18
2.2 Commercialized Applications20
2.3 Developing Technology20
2.4 Future Opportunities27
2.5 Conclusion30
References30
3 Electrical Spin Injection into Semiconductors32
3.1 Introduction32
3.2 Device Concepts33
3.3 Spin Injection from Semimagnetic Semiconductors39
3.4 Spin Injection across an Air-Exposed Semiconductor Interface42
3.5 Role of Interface Structure in Spin Injection45
3.6 Ferromagnetic Metals as Spin Injecting Contacts51
3.7 Characteristics of the Fe/AlGaAs(001) Interface62
3.8 Summary66
References68
4 Optical Studies of Electron Spin Transmission72
4.1 Introduction to Spin Electronics72
4.2 Spin Filtering Experiments in Ferromagnet/ Semiconductor Hybrid Structures83
4.3 Spin Filtering in Ferromagnet/ Semiconductor Schottky Diodes88
4.4 Spin Filtering in Ferromagnet/ Barrier Layer/ Semiconductor Junctions93
4.5 Ballistic Spin Transport in Spin Valve Structures101
4.6 Summary109
References110
5 Introduction to Micromagnetics114
5.1 First Spin Around the Track114
5.2 One Atom of Iron115
5.3 Non-uniform Magnetization140
References161
6 Spin Valve Giant Magnetoresistive Sensor Materials for Hard Disk Drives162
6.1 Introduction162
6.2 The GMR Effect166
6.3 A Simple But Powerful Model167
6.4 Biasing and Device Physics171
6.5 Antiferromagnets in Spin Valves172
6.6 Menagerie of Spin Valve Structures174
6.7 Future Directions180
Appendix: Semiclassical Theory of GMR183
References187
7 Magnetic Switching in High-Density MRAM189
7.1 Random Access Memories (RAMs)189
7.2 Magnetoresistive Random Access Memory (MRAM)191
7.3 MRAM Cell Scaling201
7.4 Coherent Rotation of Single-Domain Elements202
7.5 Switching of Submicron MRAM Devices208
7.6 Micromagnetic Properties of Submicron MRAM Devices214
7.7 Issues Related to Magnetic Switching in Future High- Density MRAM222
References227
8 Giant Magneto-resistive Random-Access Memories Based on Current- in- Plane Devices231
8.1 Introduction231
8.2 Magnetic Pseudo-Spin-Valve Device Switching Characteristics, Modeling, and Distributions234
8.3 The 1R0T GMRAM Architecture255
8.4 Magnetic Spin-Valve Devices for GMRAMs and GMRAM Latch Architectures258
8.5 Nonvolatile Memory Comparisons and Potential Applications260
8.6 Conclusions262
References263
Subject Index265